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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)- BUT22BF 450V(Min)- BUT22CF *High Switching Speed APPLICATIONS *Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER BUT22BF BUT22CF BUT22BF VCEO Collector-Emitter Voltage BUT22CF VEBO IC ICM IB
B
BUT22BF/CF
VALUE 750
UNIT
VCES
Collector-Emitter Voltage VBE= 0
V 850 400 V 450 9 8 20 4 6 23 150 -65~150 V A A A A W
Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak tp< 20ms Base Current-Continuous Base Current-Peak tp< 20ms Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range
IBM PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 5.5 55 UNIT /W /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER BUT22BF IC= 0.1A ;IB= 0; L= 25mH
B
BUT22BF/CF
CONDITIONS
MIN 400
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
V 450
BUT22CF BUT22BF BUT22CF BUT22BF BUT22CF ICES IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC= 6A; IB= 0.8A
B
VCE(sat)
Collector-Emitter Saturation Voltage
1.5 V 1.5 1.5 V 1.5 1.0 10 25 mA mA
IC= 6A; IB= 1.0A
B
VBE(sat)
Base-Emitter Saturation Voltage
IC= 6A; IB= 0.8A
B
IC= 6A; IB= 1.0A
B
VCE= VCESmax;VBE= 0 VEB= 9V; IC=0 IC= 1A ; VCE= 5V
Switching Times; Resistive Load ton tstg tf Turn-On Time Storage Time Fall Time For BUT22CF IC= 6A; IB1= -IB2= 1.0A 1.0 4.5 0.7 s s s
For BUT22BF IC= 6A; IB1= -IB2= 0.8A
isc Websitewww.iscsemi.cn
2


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